DISTRIBUTED DECOUPLING CAPACITOR

摘要

The electrical device includes a plurality of fin structures, the plurality of fin structures including at least one decoupling fin and at least one semiconductor fin. Each of the plurality of fin structures having substantially a same geometry. The electrical device includes at least one semiconductor device including a channel region present in the at least one semiconductor fin, a gate structure present on the channel region of the at least one semiconductor fin, and source and drain regions present on source and drain region portion of the at least one semiconductor fin. The electrical device includes at least one decoupling capacitor including the decoupling fin structure as a first electrode of the decoupling capacitor, a node dielectric layer and a second electrode provided by the metal contact to the source and drain regions of the semiconductor fin structures, wherein the decoupling capacitor is present underlying the power line to the semiconductor fin structures.

主权项

1. An electrical device comprising:
a plurality of fin structures including at least one decoupling fin structure and at least one semiconductor fin structure; at least one semiconductor device including a channel region present in the at least one semiconductor fin structure, a gate structure present on the channel region of the at least one semiconductor fin structure, and source and drain regions present on source and drain region portions of the at least one semiconductor fin structure; and at least one decoupling capacitor including the at least one decoupling fin structure, wherein the decoupling capacitor is present underlying the power line to the at least one semiconductor fin structure.