发明名称 PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS
摘要 A plasma enhanced chemical vapor deposition (PECVD) apparatus including a chamber; an upper electrode in the chamber; a spray unit in the upper electrode to spray a gas introduced from outside the chamber toward a substrate inside the chamber; a susceptor on which the substrate is mountable; a plurality of mask supports in a mask frame at an edge of the susceptor, the mask supports being formed of a conductive material that provides elastic force by supporting a mask to maintain and control a level of the mask; and a power supply unit to supply power to the upper electrode.
申请公布号 US2017002468(A1) 申请公布日期 2017.01.05
申请号 US201615049162 申请日期 2016.02.22
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 CHOI Jai Hyuk;PARK Won Woong;KEY Sung Hun;KIM Min Soo;LEE Byeong Chun;JUNG Suk Won;JOO Hyun Woo;HUH Myung Soo
分类号 C23C16/50;C23C16/458;C23C16/455 主分类号 C23C16/50
代理机构 代理人
主权项 1. A plasma enhanced chemical vapor deposition (PECVD) apparatus, comprising: a chamber; an upper electrode in the chamber; a spray unit in the upper electrode to spray a gas introduced from outside the chamber toward a substrate inside the chamber; a susceptor on which the substrate is mountable; a plurality of mask supports in a mask frame at an edge of the susceptor, the mask supports being formed of a conductive material that provides elastic force by supporting a mask to maintain and control a level of the mask; and a power supply unit to supply power to the upper electrode.
地址 Yongin-si KR