发明名称 |
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS |
摘要 |
A plasma enhanced chemical vapor deposition (PECVD) apparatus including a chamber; an upper electrode in the chamber; a spray unit in the upper electrode to spray a gas introduced from outside the chamber toward a substrate inside the chamber; a susceptor on which the substrate is mountable; a plurality of mask supports in a mask frame at an edge of the susceptor, the mask supports being formed of a conductive material that provides elastic force by supporting a mask to maintain and control a level of the mask; and a power supply unit to supply power to the upper electrode. |
申请公布号 |
US2017002468(A1) |
申请公布日期 |
2017.01.05 |
申请号 |
US201615049162 |
申请日期 |
2016.02.22 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
CHOI Jai Hyuk;PARK Won Woong;KEY Sung Hun;KIM Min Soo;LEE Byeong Chun;JUNG Suk Won;JOO Hyun Woo;HUH Myung Soo |
分类号 |
C23C16/50;C23C16/458;C23C16/455 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
1. A plasma enhanced chemical vapor deposition (PECVD) apparatus, comprising:
a chamber; an upper electrode in the chamber; a spray unit in the upper electrode to spray a gas introduced from outside the chamber toward a substrate inside the chamber; a susceptor on which the substrate is mountable; a plurality of mask supports in a mask frame at an edge of the susceptor, the mask supports being formed of a conductive material that provides elastic force by supporting a mask to maintain and control a level of the mask; and a power supply unit to supply power to the upper electrode. |
地址 |
Yongin-si KR |