Substrate Structure Removal

摘要

Fabrication of a heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can be epitaxially grown on a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.

主权项

1. A method of fabricating a group III nitride heterostructure, the method comprising:
epitaxially growing a sacrificial layer over a substrate structure; epitaxially growing the group III nitride heterostructure directly on the sacrificial layer; and decomposing the sacrificial layer by irradiating the sacrificial layer with a laser to at least partially release the group III nitride heterostructure from the substrate structure.