| 摘要 |
A semiconductor device includes a first transistor including a first electrode, a first insulating layer above the first electrode, the first insulating layer having a first side wall, a first oxide semiconductor layer on the first side wall, the first oxide semiconductor layer being connected with the first electrode, a first gate electrode, a first gate insulating layer, and a second electrode above the first insulating layer, the second electrode being connected with the first oxide semiconductor layer; and a second transistor including a third electrode, a fourth electrode separated from the third electrode, a second oxide semiconductor layer between the third electrode and the fourth electrode, the second oxide semiconductor layer being connected with each of the third electrode and the fourth electrode, a second gate electrode, and a second gate insulating layer. |
| 主权项 |
1. A semiconductor device, comprising:
a first transistor including:
a first electrode;a first insulating layer above the first electrode, the first insulating layer having a first side wall;a first oxide semiconductor layer on the first side wall, the first oxide semiconductor layer being connected with the first electrode;a first gate electrode facing the first oxide semiconductor layer;a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode; anda second electrode above the first insulating layer, the second electrode being connected with the first oxide semiconductor layer; and a second transistor including:
a third electrode;a fourth electrode separated from the third electrode;a second oxide semiconductor layer between the third electrode and the fourth electrode, the second oxide semiconductor layer being connected with each of the third electrode and the fourth electrode;a second gate electrode facing the second oxide semiconductor layer; anda second gate insulating layer between the second oxide semiconductor layer and the second gate electrode. |
