| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device is disclosed that has a semiconductor substrate having a crystal structure with a <1,0,0> plane and a <1,1,0> plane and a surface that forms an angle of about 0.3 degrees to about 0.7 degrees with the <1,0,0> plane in the direction of the <1,1,0> plane; and a compound semiconductor layer formed on the semiconductor substrate. The compound semiconductor layer is free of antiphase boundaries, and has a thickness between about 200 nm and about 1,000 nm. |
| 申请公布号 |
US2017004968(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201615194361 |
申请日期 |
2016.06.27 |
| 申请人 |
Applied Materials, Inc. |
发明人 |
BAO Xinyu;YE Zhiyuan;PIN Jean-Baptiste;SANCHEZ Errol;BASSANI Franck;BARON Thierry;BOGUMILOWICZ Yann;HARTMANN Jean-Michel |
| 分类号 |
H01L21/02;H01L29/201;H01L29/06;H01L29/04 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising
a semiconductor substrate having a crystal structure with a <1,0,0> plane and a <1,1,0> plane and a surface that forms an angle of about 0.3 degrees to about 0.7 degrees with the <1,0,0> plane in the direction of the <1,1,0> plane; and a compound semiconductor layer formed over the surface. |
| 地址 |
Santa Clara CA US |
