| 摘要 |
The invention relates to a high-frequency amplifier arrangement (1) suitable for generating power outputs ≥ 1kW at frequencies ≥ 2MHz, for the purpose of plasma excitation, comprising a. two LDMOS transistors (S1, S2) each connected by their source connection to an earth connection point (5), wherein the LDMOS transistors (S1, S2) have the same design and are arranged in an assembly (3) (package), b. a circuit board (2) lying flat against a metallic cooling plate (25) and connected, by means of a plurality of earth connections (8, 19, 21, 24), to said cooling plate (25) which can be connected to the earth (26), wherein the assembly (3) is arranged on or against the circuit board (2), c. a power transformer (7) whose primary winding (6) is connected to the drain connections of the LDMOS transistors (S1, S2), and d. a signal transmitter (10) whose secondary winding (13) is connected, with a first end and via one or more resistive elements (14), to the gate connection (15) of one LDMOS transistor (S1) and connected, with a second end and via one or more resistive elements (16), to the gate connection (17) of the other LDMOS transistor (S2), wherein each gate connection (15, 17) is connected to the earth (19, 21) via at least one voltage-limiting structural element arrangement (18, 20, 18', 20'). |
