SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device may include: a substrate having first and second surfaces; an interlayer dielectric layer having a first opening to expose the first surface; a first plug positioned in the first opening and isolated from a sidewall of the first opening by a pair of gaps; a bit line extended in any one direction while covering the first plug; a second plug including a lower part adjacent to the first plug and an upper part adjacent to the bit line, and connected to the second surface; a first air gap positioned between the first plug and the lower part of the second plug; and a second air gap positioned between the bit line and the upper part of the second plug, and having a larger width than the first air gap.

主权项

1. A semiconductor device comprising:
a substrate having first and second surfaces; an interlayer dielectric layer formed over the first surface and having a first opening to expose the first surface; a first plug positioned in the first opening; a bit line extending in a first direction and covering the first plug; a second plug comprising a lower part and an upper part, wherein the lower part is at the same level as the first plug, wherein the upper part is at the same level as the bit line; a first air gap positioned between the first plug and the lower part of the second plug; and a second air gap positioned between the bit line and the upper part of the second plug, wherein the second air gap has a larger width than the first air gap.