| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, and a third region; forming a plurality of spacers on the first region, the second region, and the third region; forming a first patterned mask to cover the spacers on the first region and the second region; and removing the spacers on the third region. |
| 申请公布号 |
US2017005102(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201514816081 |
申请日期 |
2015.08.03 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Feng Li-Wei;Tsai Shih-Hung;Lin Chao-Hung;Hong Shih-Fang;Jenq Jyh-Shyang |
| 分类号 |
H01L27/11;H01L21/8238;H01L21/762;H01L27/092 |
主分类号 |
H01L27/11 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate having a first region, a second region, and a third region; forming a plurality of spacers on the first region, the second region, and the third region; forming a first patterned mask to cover the spacers on the first region and the second region; and removing the spacers on the third region. |
| 地址 |
Hsin-Chu City TW |
