发明名称 |
TEMPERATURE CONTROLLED SUBSTRATE PROCESSING |
摘要 |
A semiconductor processing system includes a vacuum chamber, a gas source configured to supply a gas to the chamber, a platen having a top surface in the chamber to support a substrate, the platen including a conductive plate, a robot to transport the substrate onto and off of the platen, a first plurality of lamps disposed below the top surface of the platen to heat the platen, and an RF power source to generate a plasma in the chamber above the platen. |
申请公布号 |
WO2017004050(A1) |
申请公布日期 |
2017.01.05 |
申请号 |
WO2016US39834 |
申请日期 |
2016.06.28 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SWAMINATHAN, Bharath;NG, Eric;PATIBANDLA, Nag B.;NG, Hou T.;KUMAR, Ashavani;JOSHI, Ajey M.;FREY, Bernard;KRISHNAN, Kasiraman |
分类号 |
H01L21/02;H01L21/205;H01L21/67;H05H1/46 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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