Ultra High Voltage Device

摘要

According to an embodiment, a semiconductor device is provided. The device includes: The second region has a greater curvature than the first region. The device includes: an N-type epitaxy layer; a P-well in the N-type epitaxy layer; a drain in the N-type epitaxy layer; a source in the P-well; and a bulk in the P-well and in contact with the source, wherein the bulk has a greater area in the second region than in the first region.

主权项

1. A semiconductor device having a first region and a second region, the second region having a greater curvature than the first region, the device comprising:
an N-type epitaxy layer in the first region and the second region; a P-well in the N-type epitaxy layer; a first N+ diffusion layer in the N-type epitaxy layer; a second N+ diffusion layer in the P-well; and a P+ diffusion layer in the P-well and separated from the second N+ diffusion layer, wherein a distance between the P+ diffusion layer and the second N+ diffusion layer is smaller in the second region than in the first region.