Semiconductor Device Including a Contact Structure Directly Adjoining a Mesa Section and a Field Electrode

摘要

A semiconductor device includes a gate structure that extends from a first surface into a semiconductor portion and that surrounds a transistor section of the semiconductor portion. A field plate structure includes a field electrode and extends from the first surface into the transistor section. A mesa section of the semiconductor portion separates the field plate structure and the gate structure. A contact structure includes a first portion directly adjoining the mesa section and a second portion directly adjoining the field electrode. The first and second portions include stripes and are directly connected to each other.

主权项

1. A semiconductor device, comprising:
a gate structure extending from a first surface into a semiconductor portion and surrounding a transistor section of the semiconductor portion; a field plate structure extending from the first surface into the transistor section and comprising a field electrode; a mesa section of the semiconductor portion separating the field plate structure and the gate structure; and a contact structure comprising a first portion directly adjoining the mesa section and a second portion directly adjoining the field electrode, wherein the first and second portions include stripes and are directly connected to each other.