Semiconductor device and related fabrication method

摘要

Embodiments of the invention provide a semiconductor device and a related method of fabricating a semiconductor device. In one embodiment, the invention provides a semiconductor device comprising a first gate electrode comprising a lower silicon pattern and an upper silicon pattern and disposed on an active region of a semiconductor substrate, wherein the upper silicon pattern has the same crystal structure as the lower silicon pattern and the active region is defined by a device isolation layer. The semiconductor device further comprises a gate insulating layer disposed between the active region and the first gate electrode.