MASK ALIGNMENT MARK, PHOTOMASK, EXPOSURE APPARATUS, EXPOSURE METHOD, AND MANUFACTURING METHOD OF DEVICE

摘要

According to one embodiment, there is provided a mask alignment mark disposed on a photomask irradiated by an illumination optical system with illumination light from a direction inclined with respect to an optical axis and used to form a latent image on a substrate through a projection optical system. The mask alignment mark including a plurality of patterns arranged in a predetermined direction at a pitch of substantially P=λ/{2×(1−σ)×(LNA)}, where σ is a ratio of a numerical aperture INA of illumination light incident on the photomask from the illumination optical system to a numerical aperture LNA of an object side of the projection optical system (INA)/(LNA), and λ is a wavelength of light.

主权项

1. A mask alignment mark disposed on a photomask irradiated by an illumination optical system with illumination light from a direction inclined with respect to an optical axis and used to form a latent image on a substrate through a projection optical system, the mask alignment mark comprising:
a plurality of patterns arranged in a predetermined direction at a pitch of substantially
P=λ/{2×(1−σ)×(LNA)} where σ is a ratio of a numerical aperture INA of illumination light incident on the photomask from the illumination optical system to a numerical aperture LNA of an object side of the projection optical system (INA)/(LNA), and λ is a wavelength of light.