发明名称 |
A DEVICE COMPRISING A III-N LAYER STACK WITH IMPROVED PASSIVATION LAYER AND ASSOCIATED MANUFACTURING METHOD |
摘要 |
A device comprising a III-N layer stack featuring a two-dimensional electron gas is disclosed, comprising: a III-N layer; a AI-III-N layer on top of the III-N layer; a passivation layer on top of said AI-III-N layer, the passivation layer comprising Silicon Nitride (SiN); wherein said passivation layer comprises a fully crystalline sub layer at the AI-III-N interface and at least part of the fully crystalline sub layer comprises Al and/or B; and associated methods for manufacturing the device. |
申请公布号 |
EP2817826(B1) |
申请公布日期 |
2017.01.04 |
申请号 |
EP20120775473 |
申请日期 |
2012.10.12 |
申请人 |
EpiGan NV |
发明人 |
DERLUYN, Joff;DEGROOTE, Stefan;GERMAIN, Marianne |
分类号 |
H01L29/778;H01L21/336;H01L29/51 |
主分类号 |
H01L29/778 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|