Semiconductor device and method of fabricating the same

摘要

A method of fabricating a semiconductor device includes forming an insulation pattern including a mask region and an open region on a gallium nitride substrate, growing gallium nitride semiconductor layers to cover the insulation pattern, and patterning the semiconductor layers to form a plurality of semiconductor stacks separated from each other, the plurality of semiconductor stacks being electrically isolated from the gallium nitride substrate by the insulation pattern.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming an insulation pattern comprising a mask region and an open region on a gallium nitride substrate; growing gallium nitride semiconductor layers from the open region exposing the gallium nitride substrate to cover the insulation pattern by epitaxial lateral overgrowth (ELOG); and patterning the semiconductor layers to form a plurality of semiconductor stacks separated from each other, the plurality of semiconductor stacks being electrically isolated from the gallium nitride substrate by the insulation pattern.