发明名称 Semiconductor device with a sense amplifier unit responsive to a voltage change of input signals and a sense control signal
摘要 A sense amplifier circuit includes an enable signal generation unit configured to generate an enable signal when a change in a voltage level of input signals is sensed; a sink unit configured to provide a sense voltage in response to the enable signal; and a sense unit configured to generate an output signal in response to the sense voltage and the input signals.
申请公布号 US9536576(B2) 申请公布日期 2017.01.03
申请号 US201213604472 申请日期 2012.09.05
申请人 SK Hynix Inc. 发明人 Kim Hyung Soo
分类号 G11C7/08;G11C7/06;G11C11/4091 主分类号 G11C7/08
代理机构 William Park & Associates Ltd. 代理人 William Park & Associates Ltd.
主权项 1. A semiconductor device, comprising: a bit line sense amplifier configured to amplify data of a memory cell; a column switch configured to transmit the amplified data to first data I/O lines in response to a column select signal; and a sense amplifier unit configured to generate output signals by amplifying the transmitted data and output the output signals to second data I/O lines in response to an enable signal, wherein the sense amplifier unit comprises an enable signal generation unit configured to sense a change in a voltage level of the transmitted data and generate the enable signal from a sense control signal according to a result of the sensing, a sink unit configured to supply a sense voltage in response to the enable signal, and a sense unit configured to generate the output signals in response to the sense voltage and the transmitted data.
地址 Icheon-si KR
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