发明名称 |
Semiconductor device with a sense amplifier unit responsive to a voltage change of input signals and a sense control signal |
摘要 |
A sense amplifier circuit includes an enable signal generation unit configured to generate an enable signal when a change in a voltage level of input signals is sensed; a sink unit configured to provide a sense voltage in response to the enable signal; and a sense unit configured to generate an output signal in response to the sense voltage and the input signals. |
申请公布号 |
US9536576(B2) |
申请公布日期 |
2017.01.03 |
申请号 |
US201213604472 |
申请日期 |
2012.09.05 |
申请人 |
SK Hynix Inc. |
发明人 |
Kim Hyung Soo |
分类号 |
G11C7/08;G11C7/06;G11C11/4091 |
主分类号 |
G11C7/08 |
代理机构 |
William Park & Associates Ltd. |
代理人 |
William Park & Associates Ltd. |
主权项 |
1. A semiconductor device, comprising:
a bit line sense amplifier configured to amplify data of a memory cell; a column switch configured to transmit the amplified data to first data I/O lines in response to a column select signal; and a sense amplifier unit configured to generate output signals by amplifying the transmitted data and output the output signals to second data I/O lines in response to an enable signal, wherein the sense amplifier unit comprises an enable signal generation unit configured to sense a change in a voltage level of the transmitted data and generate the enable signal from a sense control signal according to a result of the sensing, a sink unit configured to supply a sense voltage in response to the enable signal, and a sense unit configured to generate the output signals in response to the sense voltage and the transmitted data. |
地址 |
Icheon-si KR |