Structures for resistance random access memory and methods of forming the same

摘要

Memory cells and methods of forming the same and devices including the same. The memory cells have first and second electrodes. An amorphous semiconductor material capable of electronic switching and having a first band gap is between the first and second electrodes. A material is in contact with the semiconductor material and having a second band gap, the second band gap greater than the first band gap.

主权项

1. A memory device comprising at least one memory cell, comprising:
first and second electrodes; a first semiconductor material between the first and second electrodes, the first semiconductor material being amorphous, capable of electronic switching, having a first band gap and having a crystallization temperature greater than a temperature the first semiconductor material is exposed to during the memory cell manufacture process; and a material having a second band gap in contact with the first semiconductor material, the second band gap being greater than the first band gap, the material having the second band gap being dielectric, the dielectric material being no greater than 2 nm in thickness and configured to allow carrier-tunneling there-through without rupturing during operation of the memory cell.