发明名称 Recess with asymmetric walls and method of fabricating the same
摘要 A fabricating method of a recess with asymmetric walls includes the steps of providing a substrate comprising a top surface. A recess is formed in the substrate, wherein the recess comprises a first wall, a second wall and a bottom. A patterned mask is formed to cover the substrate. Part of the top surface adjacent to the second wall is exposed through the patterned mask. Finally, the substrate is removed to form a sloping wall, wherein the sloping wall, the first wall and the bottom form a recess with asymmetric walls.
申请公布号 US9536922(B2) 申请公布日期 2017.01.03
申请号 US201414558686 申请日期 2014.12.02
申请人 UNITED MICROELECTRONICS CORP. 发明人 Lai Ming-Te;Wu Chih-Hong;Hsu Feng-Ying
分类号 H01L21/84;H01L23/48;H01L27/146;H01L21/48;H01L21/311;H01L21/02 主分类号 H01L21/84
代理机构 代理人 Hsu Winston;Margo Scott
主权项 1. A fabricating method of a recess with asymmetric walls, comprising: providing a substrate comprising a top surface; forming a recess in the substrate, wherein the recess comprises a first wall, a second wall and a bottom; forming a patterned mask covering the substrate, and the patterned mask filling in the recess partly, wherein the patterned mask layer at least covers the bottom and the first wall and wherein part of the top surface connecting to the second wall is exposed through the patterned mask; and removing the substrate by taking the patterned mask layer as a mask to form a sloping wall, wherein the sloping wall, the first wall and the bottom form a recess with asymmetric walls.
地址 Hsin-Chu TW