Fin structure of semiconductor device

摘要

The disclosure relates to a fin structure of a semiconductor device. An exemplary fin structure for a semiconductor device comprises a lower portion protruding from a major surface of a substrate, wherein the lower portion comprises a first semiconductor material having a first lattice constant; an upper portion having an interface with the lower portion, wherein the upper portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; a first pair of notches lower than the interface and extending into opposite sides of the lower portion, wherein each first notch have a first width; and a second pair of notches extending into opposite sides of the interface, wherein each second notch have a second width greater than the first width.

主权项

1. A method of fabricating a semiconductor device, comprising:
providing a substrate having an isolation structure surrounding a fin structure, wherein the fin structure comprises a lower portion comprising a first semiconductor material and an upper portion comprising a second semiconductor material different than the first semiconductor material and having an interface with the lower portion, wherein a top surface of the isolation structure is lower than the interface; and performing an oxidation process to the substrate to form a first pair of notches extending into opposite sides of the lower portion and a second pair of notches extending into opposite sides of the interface.