| 发明名称 | Photomask with three states for forming multiple layer patterns with a single exposure | ||
| 摘要 | The present disclosure provides one embodiment of a mask for a lithography exposure process. The mask includes a mask substrate; a first mask material layer patterned to have a first plurality of openings that define a first layer pattern; and a second mask material layer patterned to have a second plurality of openings that define a second layer pattern. | ||
| 申请公布号 | US9535316(B2) | 申请公布日期 | 2017.01.03 |
| 申请号 | US201314030755 | 申请日期 | 2013.09.18 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Lu Yen-Cheng;Shih Chih-Tsung;Yu Shinn-Sheng;Chen Jeng-Horng;Yen Anthony |
| 分类号 | H01L21/033;G03F1/22;H01L21/311;G03F1/20;G03F7/20;H01L21/308;H01L21/027;H01L21/768 | 主分类号 | H01L21/033 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A mask for a lithography exposure process, comprising: a mask substrate; a first mask material layer over the mask substrate and patterned to have a first plurality of openings that define a first layer pattern; and a second mask material layer over the first mask material layer and patterned to have a second plurality of openings that define a second layer pattern, wherein the first and second layer patterns belong to two different layers of an integrated circuit (IC) design layout. | ||
| 地址 | Hsin-Chu TW | ||