| 发明名称 | MOSFET with ultra low drain leakage | ||
| 摘要 | A semiconductor device includes a monocrystalline substrate configured to form a channel region between two recesses in the substrate. A gate conductor is formed on a passivation layer over the channel region. Dielectric pads are formed in a bottom of the recesses and configured to prevent leakage to the substrate. Source and drain regions are formed in the recesses on the dielectric pads from a deposited non-crystalline n-type material with the source and drain regions making contact with the channel region. | ||
| 申请公布号 | US9536945(B1) | 申请公布日期 | 2017.01.03 |
| 申请号 | US201514814142 | 申请日期 | 2015.07.30 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | de Souza Joel P.;Fogel Keith E.;Kim Jeehwan;Sadana Devendra K. |
| 分类号 | H01L29/66;H01L29/06;H01L29/08;H01L29/78;H01L29/26;H01L23/00;H01L29/786;H01L23/31;H01L21/02;H01L29/267 | 主分类号 | H01L29/66 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. ;Percello Louis J. |
| 主权项 | 1. A semiconductor device, comprising: a monocrystalline substrate configured to form a channel region between two recesses in the substrate; a gate conductor formed on a passivation layer over the channel region; dielectric pads formed in a bottom of the recesses and configured to prevent leakage to the substrate; and source and drain regions formed in the recesses on the dielectric pads from a deposited non-crystalline n-type material with the source and drain regions making contact with the channel region. | ||
| 地址 | Armonk NY US | ||