发明名称 Method and apparatus for microwave treatment of dielectric films
摘要 An apparatus for thermal treatment of dielectric films on substrates comprises: a microwave applicator cavity and microwave power source; a workpiece to be heated in the cavity, comprising a porous coating on a selected substrate; and, a means of introducing a controlled amount of a polar solvent into said porous coating immediately before heating by said microwave power. The interaction of the polar solvent with the microwaves enhances the efficiency of the process, to shorten process time and reduce thermal budget. A related method comprises the steps of: depositing a porous film on a substrate; soft baking the film to a selected state of dryness; introducing a controlled amount of a polar solvent into the soft baked film; and, applying microwave energy to heat the film via interaction with the polar solvent.
申请公布号 US9538586(B2) 申请公布日期 2017.01.03
申请号 US201414120010 申请日期 2014.04.15
申请人 APPLIED MATERIALS, INC. 发明人 Ahmad Iftikhar
分类号 H01L21/02;H05B6/80;H01L21/268;H01L21/67 主分类号 H01L21/02
代理机构 Moser Taboada 代理人 Moser Taboada ;Taboada Alan
主权项 1. A method for processing a dielectric film on a substrate, comprising: depositing a porous film on a selected substrate; soft baking said porous film to a selected state of dryness; disposing said soft baked film in a chamber and reducing pressure in the chamber to draw material out of pores in said soft baked film; subsequently introducing a controlled amount of a selected polar solvent into pores of said soft baked film by providing the polar solvent to the chamber and raising pressure in the chamber; and applying microwave energy to heat said soft baked film, wherein said heat treatment is enhanced by an interaction of said microwave energy with said polar solvent.
地址 Santa Clara CA US