发明名称 |
Semiconductor and fabrication method thereof |
摘要 |
A semiconductor device with p-channel and n-channel field effect devices formed on a common substrate, where the drain and source regions of the n-channel field effect device are formed within a silicon epitaxial layer formed on a silicon layer germanium relax which is formed on a silicon germanium buffer layer with a graduated germanium concentration. Additionally, drain and source regions of the p-channel field effect device are formed within a silicon-germanium compound layer formed on the substrate and the silicon epitaxial cap layer formed on the silicon-germanium compound layer.
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申请公布号 |
US6750486(B2) |
申请公布日期 |
2004.06.15 |
申请号 |
US20000733474 |
申请日期 |
2000.12.08 |
申请人 |
SONY CORPORATION |
发明人 |
SUGAWARA MINORU;NOGUCHI TAKASHI |
分类号 |
H01L29/78;H01L21/8238;H01L27/092;H01L29/10;H01L29/80;(IPC1-7):H01L27/15 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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