发明名称 Semiconductor Structure Having Thermal Backside Core
摘要 A semiconductor structure includes a semiconductor substrate having a recess disposed beneath a semiconductor device. The semiconductor structure also includes a thermally conductive core disposed in the recess, and a package substrate including a heat sink. The heat sink is in thermal contact with the thermally conductive core.
申请公布号 US2016351466(A1) 申请公布日期 2016.12.01
申请号 US201615221543 申请日期 2016.07.27
申请人 Avago Technologies General IP (Singapore) Pte. Ltd. 发明人 Perkins Nathan
分类号 H01L23/367;H01L23/498 主分类号 H01L23/367
代理机构 代理人
主权项 1. A semiconductor structure, comprising: a semiconductor substrate having a recess disposed beneath a semiconductor device; a thermally conductive core disposed in the recess; and a package substrate comprising a heat sink, wherein the heat sink is in thermal contact with the thermally conductive core.
地址 Singapore SG