METHODS AND APPARATUS FOR MEASURING ELECTRON BEAM SPOT

摘要

The present disclosure provides methods and apparatuses for measuring an electron beam spot. The method may comprise: preparing a first substrate by forming a suspended photoresist layer on the first substrate and forming a detecting channel on another side of the first substrate opposite to the photoresist layer; preparing a second substrate by forming a back cavity structure in the second substrate; fixing back cavity entrance side of the second substrate to the photoresist side of the first substrate and aligning the detecting channel with the entrance of the back cavity structure; scanning the electron beam to be measured across the detecting channel in a path angle of ¸ in one direction to expose the photoresist in a backwards direction, wherein the path angle is an inclination angle formed by the scanning direction of the electron beam and the lengthwise direction of the detecting channel; developing the photoresist and measuring a pattern length L of the photoresist along the scanning direction and calculating the beam spot diameter d of the electron beam according to the following formula: d = L · tan ¸ - W / cos ¸ .