发明名称 グラフェン電子素子及び製造方法
摘要 The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.
申请公布号 JP6032923(B2) 申请公布日期 2016.11.30
申请号 JP20120086171 申请日期 2012.04.05
申请人 三星電子株式会社Samsung Electronics Co.,Ltd. 发明人 許 鎭盛;▲鄭▼ 現鍾;徐 順愛;李 晟熏;梁 喜準
分类号 H01L29/786;H01L21/336;H01L51/05;H01L51/30;H01L51/40 主分类号 H01L29/786
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