| 摘要 |
[Problem] To obtain a photoelectric conversion element which is provided with a buffer layer that is capable of suppressing variation in characteristics among elements. [Solution] A photoelectric conversion element which is obtained by laminating, on a substrate (10), a lower electrode layer (20), a photoelectric conversion layer (30), a buffer layer (40) and a light-transmitting conductive layer (60), said photoelectric conversion layer (30) being mainly formed of at least one compound semiconductor that is composed of a group Ib element, a group IIIb element and a group VIb element and has a chalcopyrite structure. The buffer layer (40) is formed of a compound that contains an alkali metal; and the alkali metal is at least one of lithium, sodium and potassium. The alkali metal content in the compound that constitutes the buffer layer (40) is from 0.1 at% to 5 at% (inclusive). |
