REO GATE DIELECTRIC FOR III-N DEVICE ON Si SUBSTRATE
摘要
A rare earth oxide gate dielectric on III-N material grown on a silicon substrate includes a single crystal stress compensating template positioned on a silicon substrate. The stress compensating template is substantially crystal lattice matched to the surface of the silicon substrate. A GaN structure is positioned on the surface of the stress compensating template and substantially crystal lattice matched thereto. An active layer of single crystal III-N material is grown on the GaN structure and substantially crystal lattice matched thereto. A single crystal rare earth oxide dielectric layer is grown on the active layer of III-N material.
申请公布号
EP2973658(A4)
申请公布日期
2016.11.30
申请号
EP20140754064
申请日期
2014.01.06
申请人
TRANSLUCENT, INC.
发明人
DARGIS, RYTIS;SMITH, ROBIN;CLARK, ANDREW;ARKUN, ERDEM;LEBBY, MICHAEL