发明名称 |
Thin-Film Transistor and Manufacturing Method Thereof, Array Substrate and Manufacturing Method Thereof, and Display Apparatus |
摘要 |
A thin-film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display apparatus are provided. The method for manufacturing the TFT includes: forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate; the forming the metal oxide semiconductor active layer includes: forming the metal oxide semiconductor active layer by electrochemical reaction. The method for manufacturing the TFT is applied in the production of the TFT and the array substrate and the display apparatus comprising the TFTs and provides a new method for forming the metal oxide semiconductor active layer. |
申请公布号 |
US2016343864(A1) |
申请公布日期 |
2016.11.24 |
申请号 |
US201514785816 |
申请日期 |
2015.06.19 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
JIANG Chunsheng;LI Xuyuan;LIU Wei |
分类号 |
H01L29/786;H01L27/12;H01L29/49;H01L29/417;H01L29/66;H01L29/51 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a thin-film transistor (TFT), comprising: forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate, in which forming of the metal oxide semiconductor active layer includes:
forming the metal oxide semiconductor active layer by electrochemical reaction. |
地址 |
Beijing CN |