Semiconductor Structures

摘要

A semiconductor structure comprising a substrate, a pre-metal-interconnect dielectric (PMID) layer and a composite layer is disclosed. The PMID layer is above the substrate. The composite layer is between the substrate and the PMID layer. The composite layer comprises a first sublayer and a second sublayer. The first sublayer and the second sublayer are stacked. The bandgap of the second sublayer is larger than the bandgap of the first sublayer. The etch rate of an etchant with respect to the first sublayer is lower than the etch rate of the etchant with respect to the substrate and the PMID layer. Other semiconductor structures are also disclosed.

主权项

1. A semiconductor structure, comprising:
a substrate, a pre-metal-interconnect dielectric (PMID) layer above said substrate, a composite layer between said substrate and said PMID layer, said composite layer comprising:
a first sublayer, anda second sublayer, wherein said first sublayer and said second sublayer are stacked, and the bandgap of said second sublayer is larger than the bandgap of said first sublayer; wherein the etch rate of an etchant with respect to said first sublayer is lower than the etch rate of said etchant with respect to said substrate and said PMID layer.