MOS FIELD-EFFECT TRANSISTOR AND METHOD OF MAKING THE SAME,申请号EP19870111043-传众专利搜索

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发明名称	MOS FIELD-EFFECT TRANSISTOR AND METHOD OF MAKING THE SAME
摘要
申请公布号	EP0255133(B1)	申请公布日期	1993.10.06
申请号	EP19870111043	申请日期	1987.07.30
申请人	HITACHI, LTD.	发明人	YAZAWA, YOSHIAKI;WATANABE, ATSUO;HIRAISHI, ATSUSHI;MINAMI, MASATAKA;NAGANO, TAKAHIRO
分类号	H01L29/78;H01L29/10;H01L29/786;H01L29/808	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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