发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
Provided is a semiconductor integrated circuit device having pixel regions in a photodiode array region and having, in each of the pixel regions, a waveguide holding hole having a substantially perpendicular sidewall above the photodiode and embedded with a silicon oxide-based sidewall insulating film reaching the bottom surface of the hole and two or more silicon nitride-based insulating films having a higher refractive index on the inner side of the hole. This structure makes it possible to prevent deterioration of pixel characteristics of an imaging device, such as CMOS sensor, which is rapidly decreasing in size. |
申请公布号 |
US2016343758(A1) |
申请公布日期 |
2016.11.24 |
申请号 |
US201615228622 |
申请日期 |
2016.08.04 |
申请人 |
Renesas Electronics Corporation |
发明人 |
TOMITA Kazuo;KAWAMURA Takeshi |
分类号 |
H01L27/146;G02B6/42;G02B6/122 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |