| 摘要 |
The present invention provides a method for manufacturing a silicon single crystal wafer in which a silicon single crystal ingot is pulled by a CZ method, and a wafer sliced from the ingot is subjected to a rapid thermal annealing, wherein wafers sliced from the ingot which has been pulled while changing a pulling rate are subjected to rapid thermal annealings in various heat treatment temperatures, oxide dielectric breakdown voltage measurements are performed to get a relation between the pulling rate and the heat treatment temperatures, and a result of the oxide dielectric breakdown voltage measurements in advance, conditions of a pulling rate and a heat treatment temperature are determined based on the relation so that the whole area thereof in the radial direction may become N region after the rapid thermal annealing, and the pulling of the ingot and the rapid thermal annealing are performed to thereby manufacture the silicon single crystal wafer. As a result of this, a manufacturing method capable of efficiently and certainly manufacturing the silicon wafer in which a DZ layer can be secured in a wafer surface layer and an oxide precipitate can be formed in a bulk region of the wafer is provided. |
