| 摘要 |
The present invention provides a wafer machining method. The wafer machining method comprises a transmutation layer forming step of irradiating laser rays of wavelength with permeability in relative to a wafer along a dividing preset line in a manner that a focus aligns to the inside and forming a transmutation layer serving as a rupture starting point along the dividing preset line inside the wafer; and a backside grinding step of grinding the backside of the wafer so as to form a ruled thickness and dividing the wafer into various components along the dividing preset line of which the intensity is lowered because of the formation of the transmutation layer. Before implementation of the backside grinding step, a protection element fitting step of fitting a protection element which is cooled to be at a temperature lower than the temperature when the backside grinding step is implemented onto the surface of the wafer is carried out, the protection element swells because of rise in temperature when the backside grinding step is carried out, thus gaps are formed among components to be divided, and contact between adjacent component is restrained. |
