| 摘要 |
A chemical sensor (10) is described with at least one layer (11) of metal oxide arranged between two electrodes (16) with the length of the layer of metal oxide between the electrodes (16) being less than 50 microns, wherein at least one interface layer (17) is formed between the surface of at least one of the electrodes (16) and the layer (11) of metal oxide and wherein the interface layer (17) lowers the contact resistance between the electrodes and the layer of metal oxide by facilitating transport of charge carriers across layer boundaries. The interface lyer (17) is produced by either (i) highly doping the interface region between the electrodes (16) and the metal oxide layer (11), (ii) incorporating an interface material with a conduction energy band situated between the fermi level of the electrodes (16) and the conduction band of the metal oxide layer (11), or (iii) forming the interface layer (17) as a dipolar layer. |
