| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer manufacturing method which can improve flatness of an outer periphery of a semiconductor wafer surface.SOLUTION: A semiconductor wafer manufacturing method comprises: a rough polishing process S5 of roughly polishing both of a surface and a rear face of a semiconductor wafer; a beveled mirror polishing process S7 of mirror polishing a beveled part of the roughly polished semiconductor wafer; and a mirror finish polishing process S9 of mirror polishing the surface or both of the surface and the rear face of the beveled semiconductor wafer. The semiconductor wafer manufacturing method further comprises, after the beveled mirror polishing process, a process S8 of performing polishing on the semiconductor wafer surface by using an alkaline solution containing at least either one of cerium oxide or zirconium oxide to remove an oxide film existing on the semiconductor wafer surface. After performing the process S8, the mirror finish polishing process is performed. |
