| 摘要 |
A manufacturing method for a group III semiconductor light emitting device flip-chip structure, comprising the steps: producing in sequence from bottom to top a substrate (1), a buffer layer (2), an N-type nitride semiconductor layer (3), an active layer (4), and a P-type nitride semiconductor layer (5) to form an epitaxial structure, the upper layer of said epitaxial structure being the upper surface of the p type nitride semiconductor layer (5); depositing a transparent conductive layer (14); defining isolation grooves by means of a yellow light etching process; depositing a first insulating layer structure (8-1); depositing a P-type contact metal (9) and an N-type contact metal (10); depositing a second insulating layer structure (11-1); depositing a flip-chip P-type electrode (12) and a flip-chip N type electrode (13) to obtain wafers; thinning, dicing, splitting, testing, and sorting the wafers. Linear convex mesa technology is used throughout to substitute for the multiple vias technology used in the prior art. In the first step, the patterns of the transparent conductive layer (14) and the linear convex mesa (19) can be manufactured together, simplifying the manufacturing process and resolving the problem of aligning the patterns of the transparent conductive layer (14) and the linear convex mesa (19). |
