| 摘要 |
PROBLEM TO BE SOLVED: To improve performance of a semiconductor device.SOLUTION: A manufacturing method for a semiconductor device includes the steps of: sequentially forming an insulation film 16, a conductive film 17, an insulation film 18 containing silicon, and a film 19 made from silicon, on a surface of a control gate electrode CG1; next etching back the film 19 to form a spacer SP11 on the control gate electrode CG1's side surface through the insulation film 16, conductive film 17, and insulation film 18 while leaving the film 19; and next etching back the conductive film 17 to form a memory gate electrode MG1 that is positioned between the spacer SP11 and the control gate electrode CG1 and between the spacer SP11 and a semiconductor substrate 11 and is constituted by the conductive film 17.SELECTED DRAWING: Figure 15 |
