Method of Manufacturing Semiconductor Devices and Semiconductor Device Containing Oxygen-Related Thermal Donors

摘要

A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer. On the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as information about a generation rate or a dissociation rate of oxygen-related thermal donors in the semiconductor wafer, a process temperature gradient is determined for generating or dissociating oxygen-related thermal donors to compensate for a difference between a target dopant concentration and the extrinsic dopant concentration.

主权项

1. A method of manufacturing a semiconductor device, the method comprising
determining information indicating an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer; determining, on the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as a generation rate or a dissociation rate of oxygen-related thermal donors in the semiconductor wafer, a process temperature gradient for generating or dissociating oxygen-related thermal donors to compensate for a difference between a target donor concentration and the extrinsic dopant concentration, wherein the target donor concentration is greater than an extrinsic donor concentration; and subjecting the semiconductor wafer to a main heat treatment that applies the process temperature gradient.