发明名称 |
THIN FILM TRANSISTOR, PREPARATION METHOD THEREFOR, DISPLAY DEVICE AND ELECTRONIC PRODUCT |
摘要 |
A thin film transistor (TFT) according to the present disclosure may include an active layer, an etch stop layer (ESL), a source electrode and a drain electrode. The active layer may include at least one first active portion, a second active portion and a third active portion located on both sides of the first active portion and connected to the first active portion. The at least one first active portion may be overlaid by the ESL, and a longitudinal width of the at least one first active portion may be less than those/that of the second active portion and/or the third active portion. The second active portion and the third active portion may be overlaid by a horizontally-extending portion of the ESL on the first active portion. A side wing contact may be formed between the second active portion and one electrode of the source electrode and the drain electrode, and/or a side wing contact may be formed between the third active portion and the other electrode of the source electrode and the drain electrode. |
申请公布号 |
EP3091579(A1) |
申请公布日期 |
2016.11.09 |
申请号 |
EP20140859315 |
申请日期 |
2014.04.16 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD.;CHONGQING BOE OPTOELECTRONICS CO. LTD. |
发明人 |
CHUNG, JAEMOON;CHOI, INCHUL;CUI, XINGHUA |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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