发明名称 |
CHAMBER CLEANING AND SEMICONDUCTOR ETCHING GASES |
摘要 |
The present invention relates to fluoroolefin compositions useful as gases for CVD semiconductor manufacture, particularly for etching applications including methods for removing surface deposits from the interior of a chemical vapor deposition chamber by using an activated gas mixture, and methods for etching the surface of a semiconductor. |
申请公布号 |
EP3090073(A1) |
申请公布日期 |
2016.11.09 |
申请号 |
EP20140824327 |
申请日期 |
2014.12.22 |
申请人 |
THE CHEMOURS COMPANY FC, LLC |
发明人 |
PENG, SHENG;LOH, GARY;YOSHIMASA, OOSAKI |
分类号 |
C23C16/44;C09K13/00;C23G5/00;H01L21/311;H01L21/3213 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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