发明名称 半導体装置
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that allows downsizing a semiconductor element, and to provide the semiconductor element and a substrate.SOLUTION: A semiconductor element 12 includes semiconductor-element internal output parts 30C and 30D (first and second gradation voltage output parts) that outputs a multi-gradation voltage, a first power-supply terminal electrode 52a that is disposed around the semiconductor-element internal output part 30C and supplies power to the semiconductor-element internal output part 30C, and a second power-supply terminal electrode 52a that is disposed around the semiconductor-element internal output part 30D and supplies power to the semiconductor-element internal output part 30D. A substrate 18 is commonly connected to the semiconductor-element internal output parts 30C and 30D, and includes a common connection part 94 (first wiring pattern) provided under the semiconductor element 12 and an impedance adjustment part 96 (second wiring pattern) electrically connecting the common connection part 94 and an external input terminal (22).
申请公布号 JP6018660(B2) 申请公布日期 2016.11.02
申请号 JP20150042950 申请日期 2015.03.04
申请人 ラピスセミコンダクタ株式会社 发明人 中山 晃
分类号 H01L21/822;H01L23/12;H01L27/04 主分类号 H01L21/822
代理机构 代理人
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