| 摘要 |
Gas containing Si, gas containing C and gas containing Cl are introduced into a reacting furnace (Step S5). Next, in a gas atmosphere including raw material gas, additive gas, doping gas and carrier gas introduced in Step S5, a SiC epitaxial film 2 is grown on the surface of a 4H-SiC substrate 1 by a CVD method (Step S6: the first step). On this occasion, the introduction amount of the gas containing Cl relative to the gas containing Si in the gas atmosphere is reduced gradually (the second step). In the composition of the gas atmosphere at the time of start of the growth, the number of Cl atoms in the gas containing Cl is three times as large as the number of Si atoms in the gas containing Si. In the second step, the number of Cl atoms in the gas containing Cl relative to the number of Si atoms in the gas containing Si in the gas atmosphere is reduced at a rate of 0.5 %/min to 1.0 %/min. Thus, it is possible to provide a method for manufacturing a silicon carbide semiconductor device, by which a silicon carbide semiconductor film 2 can be grown at a high rate. |
