| 摘要 |
Disclosed is a field effect compound semiconductor device wherein both reduction of sheet resistance due to high-concentration ´-doping, and reduction of remote Coulomb scattering are achieved. A planar doped layer that is planarly doped with impurity atoms to be a channel electron supply source is provided in a lower barrier layer and/or an upper barrier layer, and a barrier layer portion in contact with a channel layer is formed as a III-V compound semiconductor spacer layer wherein a group V element is Sb. |
