| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method and an evaluation device, which enable strength of a heated semiconductor wafer to be stably and accurately evaluated on the basis of actual heat treatment conditions.SOLUTION: An evaluation method includes the steps of: charging a semiconductor wafer W into a horizontal furnace 11 in such a manner that a principal plane of the semiconductor wafer W is set parallel to a vertical direction and parallel to the direction of being charged into the horizontal furnace 11; quantitatively measuring deformation of the semiconductor wafer W, which is charged into the horizontal furnace 11, from a throat part 12 of the horizontal furnace 11; and evaluating strength of the semiconductor wafer W from the deformation. |
