发明名称 ウエーハの加工方法
摘要 PROBLEM TO BE SOLVED: To provide a wafer processing method which can reduce a chipping size and reduce a chipping generation rate.SOLUTION: In a wafer processing method for removing an outer circumferential annular removal area of a wafer having a chamfer on its outer periphery by a cutting blade, a lamination cutting blade 16 having more than twice the thickness of the outer circumferential annular removal area, and comprising a rough cutting blade 16a on one surface side from the center in a thickness direction and a finishing cutting blade 16b on the other surface side is prepared. The wafer processing method comprises: a rough cutting step for partially removing the chamfer with the lamination cutting blade 16 by locating the rough cutting blade 16a side to the outer circumferential annular removal area of a wafer held to cut into a first depth and rotating a chuck table 10 once; and a finishing cutting step for partially removing the chamfer by locating the finishing cutting blade 16b side of the lamination cutting blade 16 to the outer circumferential annular removal area of a wafer to cut into a second depth deeper than the first depth and rotating the chuck table 10 once.
申请公布号 JP6016473(B2) 申请公布日期 2016.10.26
申请号 JP20120138448 申请日期 2012.06.20
申请人 株式会社ディスコ 发明人 大島 直敬;笠井 康成
分类号 H01L21/304 主分类号 H01L21/304
代理机构 代理人
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