INSULATED GATE BIPOLAR TRANSISTOR AND PRODUCTION METHOD THEREFOR

摘要

[Object] To provide a production method for insulated gate bipolar transistors, whereby the miniaturization or quality of a device can be improved. [Solving Means] One embodiment of the present invention includes preparing a first conductive semiconductor substrate manufactured using the MCZ method. A second conductive base layer (12), first conductive emitter regions (13), and gate electrodes (14) are formed on a first surface of the semiconductor substrate. The semiconductor substrate is thinned by machining the second surface of the semiconductor substrate and a second conductive collector layer (15) is formed by implanting boron into the thinned second surface. A first conductive buffer layer (16) having a higher impurities concentration than the semiconductor substrate is formed by implanting hydrogen into an area inside the semiconductor substrate and adjacent to the collector layer (15).