| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist composition, a method for forming a resist pattern and a polymeric compound which exhibit excellent lithographic characteristics.SOLUTION: The resist composition generates an acid by exposure and shows changes in the solubility with a developing solution by an action of the acid. The composition comprises a base component (A) that shows changes in the solubility with a developing solution by an action of an acid; and the base component (A) includes a polymeric compound (A1) having the following structural units and a softening point of 130°C or higher. The structural units are: a structural unit (a0) derived from a monomer exhibiting a retention time shorter than that of &bgr;-(methacryloyl)oxy-γ-butyrolactone with analyzing by high performance liquid chromatography (HPLC) using a reversed phase column; and a structural unit (a1) including an acid decomposable group that shows increase in the polarity by an action of an acid. |
