| 摘要 |
PROBLEM TO BE SOLVED: To suppress occurrence of black smear in a solid state imaging device.SOLUTION: A solid state imaging device comprises: photodiodes that are positioned at a semiconductor substrate and generate light generating charge in response to incident light; and detection transistors for detecting the light generating charge generated by the photodiodes. The photodiodes include: first diffusion layers of first conductive types positioned at the semiconductor substrate; and second diffusion layers of second conductive types positioned closer to a first surface of the semiconductor substrate than the first diffusion layers. The detection transistors include: gate electrodes positioned in the second diffusion layers as viewed in a plan view; source portions and drain portions of the first conductive types positioned with the gate electrodes interposed thereamong as viewed in the plan view; and gate insulating films positioned among the gate electrodes and the first surface of the semiconductor substrate. The source portions and the drain portions include regions brought into contact with the first surface of the semiconductor substrate and are positioned apart from the first diffusion layers via the second diffusion layers of the second conductive types or third layers of the second conductive types. |
