NITRIDE-SEMICONDUCTOR ULTRAVIOLET-LIGHT EMITTING DEVICE AND NITRIDE-SEMICONDUCTOR ULTRAVIOLET-LIGHT EMITTING APPARATUS

摘要

Provided is a nitride-semiconductor light emitting device that can efficiently radiate waste heat produced through an ultraviolet-light emitting action. A nitride-semiconductor ultraviolet-light emitting device according to the present invention is provided with: a semiconductor laminated section 11 that includes an n-type AlGaN layer 6, an active layer 7 formed of an AlGaN layer, and p-type AlGaN layers 9 and 10; an n-electrode 13; a p-electrode 12; a protective insulating film 14; and a first plated electrode 15 formed of alloy consisting primarily of copper or copper formed through wet plating. The semiconductor laminated section 11 is formed in a first region R1, and the p-electrode is formed on an upper surface thereof. An upper surface of the n-type AlGaN semiconductor layer 6 is exposed in a second region, and the n-electrode 13 is formed thereon. The protective insulating film 14 has openings at which at least some parts of the n-electrode 13 and at least some parts of the p-electrode 12 are exposed. The first plated electrode 15 is formed so as to be distant from the exposed surfaces of the n-electrode 13 and so as to cover: the whole of the upper surface and the outer peripheral side surface of the first region R1; and a part of the second region R2 that is in contact with the first region R1.